While dynamic power is dissipated only when switching, leakage power due to leakage current is continuous. Of the following leakage components, sub-threshold leakage is dominant. An international team of researchers have used a unique tool inserted into an electron microscope to create a transistor thats 25,000 times smaller than the width of a human hair. You would think a thousand nanometers is as small as things can get, but using a more powerful scope, the SEM allows you to see squared transistors measuring 20. Where V dd = the supply voltage, V th = the threshold voltage, W = the transistor width and L = the transistor length. Beginning with a close up look of a millimeter’s length of electronics, the SEM allows a person to zoom in up to a micron’s length (roughly 1,000 nanometers) of the microchip. Leakage power is a function of the supply voltage V dd, the switching threshold voltage V th, and the transistor size. Dynamic power can also be reduced by cell selection-faster slew cells consume less dynamic power. Where I sc = the short-circuit current during switching, V dd = the supply voltage and f = switching frequency.ĭynamic power can be lowered by reducing switching activity and clock frequency, which affects performance and also by reducing capacitance and supply voltage. Where a = switching activity, f = switching frequency, C eff = the effective capacitance and V dd = the supply voltage. Short-circuit power is the power dissipated by an instantaneous short-circuit connection between the supply voltage and the ground at the time the gate switches state. Switching power is dissipated when charging or discharging internal and net capacitances. Total Power = P switching + P short-circuit + P leakageĭynamic power is the sum of two factors: switching power plus short-circuit power. Total power is the sum of the dynamic and leakage power Total power is a function of switching activity, capacitance, voltage, and the transistor structure itself. Power reduction strategies can be used to minimize both types of power. In geometries smaller than 90nm, leakage power has become the dominant consumer of power whereas for larger geometries, switching is the larger contributor. The power consumed in a device is composed of two types – dynamic, sometimes called switching power, and static, sometimes called leakage power.
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